DocumentCode :
780138
Title :
Arrays of AC-excited, silicon microdischarge devices as large as 40 000 (200×200) pixels: electrical and optical characteristics for operation in neon
Author :
Park, S.-J. ; Chen, K.-F. ; Ostrom, N.P. ; Eden, J.G.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Illinois, Urbana, IL, USA
Volume :
41
Issue :
6
fYear :
2005
fDate :
3/17/2005 12:00:00 AM
Firstpage :
311
Lastpage :
312
Abstract :
Electrical characteristics of arrays of (50 μm)2 Si microplasma devices operating in 500-900 Torr of Ne are presented. Arrays as large as 200×200 pixels have been AC-excited at frequencies of 5-20 kHz and all exhibit reproducible ignition voltages and lifetimes. At 700 Torr, the power consumed per pixel for a 200×200 pixel array is 85±2 μW, 190±2 μW, and 290±2 μW for excitation frequencies of 5, 10, and 15 kHz, respectively, and 5.5, 12.0, and 17.8 mA, respectively, of total current (RMS) drawn by the array.
Keywords :
electric current; neon; plasma displays; power consumption; silicon; 200 pixel; 40000 pixel; 5 to 20 kHz; 5.5 to 17.8 mA; 50 micron; 500 to 900 torr; 83 to 292 muW; AC-excited microdischarge devices; Ne; Si; electrical characteristics; ignition voltage; microdischarge arrays; microplasma devices; neon; on-chip arrays; optical characteristics; power consumption; silicon microdischarge devices;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20057858
Filename :
1421167
Link To Document :
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