• DocumentCode
    780138
  • Title

    Arrays of AC-excited, silicon microdischarge devices as large as 40 000 (200×200) pixels: electrical and optical characteristics for operation in neon

  • Author

    Park, S.-J. ; Chen, K.-F. ; Ostrom, N.P. ; Eden, J.G.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Illinois, Urbana, IL, USA
  • Volume
    41
  • Issue
    6
  • fYear
    2005
  • fDate
    3/17/2005 12:00:00 AM
  • Firstpage
    311
  • Lastpage
    312
  • Abstract
    Electrical characteristics of arrays of (50 μm)2 Si microplasma devices operating in 500-900 Torr of Ne are presented. Arrays as large as 200×200 pixels have been AC-excited at frequencies of 5-20 kHz and all exhibit reproducible ignition voltages and lifetimes. At 700 Torr, the power consumed per pixel for a 200×200 pixel array is 85±2 μW, 190±2 μW, and 290±2 μW for excitation frequencies of 5, 10, and 15 kHz, respectively, and 5.5, 12.0, and 17.8 mA, respectively, of total current (RMS) drawn by the array.
  • Keywords
    electric current; neon; plasma displays; power consumption; silicon; 200 pixel; 40000 pixel; 5 to 20 kHz; 5.5 to 17.8 mA; 50 micron; 500 to 900 torr; 83 to 292 muW; AC-excited microdischarge devices; Ne; Si; electrical characteristics; ignition voltage; microdischarge arrays; microplasma devices; neon; on-chip arrays; optical characteristics; power consumption; silicon microdischarge devices;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20057858
  • Filename
    1421167