Title :
Resistive equivalents in CMOS
Author :
Lande, T.S. ; Olsen, E. ; Toumazou, C.
Author_Institution :
Dept. of Informatics, Univ. of Oslo, Norway
Abstract :
A novel single transistor MOSFET circuit equivalent for a resistor is presented. The resistor value is tunable over six orders of magnitude. By exploring short channel effects, a linear range of more than 2.5 V with <1% relative error is verified by simulation.
Keywords :
CMOS integrated circuits; MOSFET; equivalent circuits; feedback; integrated circuit modelling; semiconductor device models; 2.5 V; CMOS process; capacitive feedback; drain-source voltage; floating gate MOSFET resistor; resistive equivalents; short channel effects; single transistor MOSFET circuit equivalent;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030820
