Title :
Electroabsorption Modulator Integrated With Buried-Ridge-Stripe Dual-Core Spot-Size Converter by Quantum-Well Intermixing
Author :
Hou, Lianping ; Zhu, Hongliang ; Wang, Wei
Author_Institution :
Dept. of Electr. & Electron. Eng., Bristol Univ.
fDate :
5/15/2007 12:00:00 AM
Abstract :
A single shallow ridge electroabsorption modulator monolithically integrated with a buried-ridge-stripe dual-core spot-size converter at the input and output port was fabricated by combining quantum-well intermixing and dual-core integration techniques simultaneously, using only a two-step low-pressure metal-organic vapor phase epitaxial process, conventional photolithography, and a chemical wet etching process. The optical insertion loss of the modulator in the on-state and the dc extinction ratio between 0 and -3 V at 1550 nm was -7.5 and 16 dB, respectively. The 3-dB modulation bandwidth was more than 10.0GHz in electrical-optical response
Keywords :
electro-optical modulation; electroabsorption; integrated optics; integrated optoelectronics; monolithic integrated circuits; optical fabrication; optical losses; photolithography; vapour phase epitaxial growth; 0 to -3 V; 1550 nm; buried-ridge-stripe converter; chemical wet etching; dc extinction ratio; dual-core converter; dual-core integration; electrical-optical response; electroabsorption modulator; low-pressure metal-organic vapor phase epitaxy; monolithic integration; on-state extinction ratio; optical insertion loss; photolithography; quantum-well intermixing; shallow ridge modulator; spot-size converter; Bandwidth; Chemical processes; Extinction ratio; Insertion loss; Lithography; Optical losses; Optical modulation; Phase modulation; Quantum wells; Wet etching; Electroabsorption modulator (EAM); photonic integrated circuit; quantum-well intermixing (QWI); spot-size converter (SSC); waveguide;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2007.895899
