Title :
Improved-performance, InGaAs/InGaAsP (λ=980 nm) asymmetric broad-waveguide diode lasers via waveguide-core doping
Author :
Lee, J.J. ; Mawst, L.J. ; Botez, D.
Author_Institution :
Reed Center for Photonics, Univ. of Wisconsin-Madison, WI, USA
Abstract :
Doping the waveguide core (p=2×1017 cm-1) in asymmetric-waveguide InGaAs/InGaAsP, two-quantum-well diode lasers (λ=980 nm) raises the injection efficiency to 90% and decreases the threshold-current density, Jth. For 2 mm long, 100 μm wide stripe, uncoated chips Jth decreases from ∼188 A/cm2 to ∼150 A/cm2. High characteristic temperatures for Jth and the slope efficiency are obtained: T0=215K and T1=600K.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; quantum well lasers; waveguide lasers; 90 percent; 980 nm; InGaAs-InGaAsP; InGaAs/InGaAsP asymmetric broad-waveguide quantum-well diode laser; characteristic temperature; injection efficiency; slope efficiency; threshold current density; waveguide-core doping;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030830
