Title :
Quantum cascade lasers emitting at lambda greater than 100 μm
Author :
Köhler, R. ; Tredicucci, A. ; Beltram, E. ; Beere, H.E. ; Linfield, E.H. ; Ritchie, D.A. ; Davies, A.G.
Author_Institution :
Scuola Normale Superiore, NEST-INFM, Pisa, Italy
Abstract :
Quantum-cascade lasers based on a bound-to-continuum transition and emitting at λ∼106 μm (2.8 THz) are reported. They produce peak output powers of a few milliwatt and can be operated up to a heatsink temperature of 65 K. The devices demonstrate the feasibility of this technology for frequencies below 3 THz.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser transitions; quantum cascade lasers; 106 micron; 2.8 THz; 65 K; GaAs-Al0.15Ga0.85As; GaAs/AlGaAs heterostructure; bound-to-continuum transition; compact semiconductor laser; quantum cascade lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030779
