Nitride-Based High-Power Flip-Chip LED With Double-Side Patterned Sapphire Substrate

Author

Shen, C.F. ; Chang, S.J. ; Chen, W.S. ; Ko, T.K. ; Kuo, C.T. ; Shei, S.C.

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan

Volume

19

Issue

10

fYear

2007

fDate

5/15/2007 12:00:00 AM

Firstpage

780

Lastpage

782

Abstract

A nitride-based high-power flip-chip (FC) light-emitting diode (LED) with a double-side patterned sapphire substrate (PSS) was proposed and realized. Under 350-mA current injection, it was found that forward voltages were 3.24, 3.26, and 3.25 V for the conventional FC LED, FC LED prepared on PSS, and FC LED with double-side PSS, respectively. It was found that the 350-mA LED output powers were 79.3, 98.1, and 121.5 mW for the conventional FC LED, FC LED prepared on PSS, and FC LED with double-side PSS, respectively. In other words, we can enhance the electroluminescence intensity by 53% without increasing operation voltage of the fabricated LED

Keywords

electroluminescence; flip-chip devices; light emitting diodes; sapphire; substrates; 121.5 mW; 3.24 V; 3.25 V; 3.26 V; 350 mA; 79.3 mW; 98.1 mW; Al₂O₃; double-side patterned sapphire substrate; electroluminescence; flip-chip LED; light-emitting diode; Etching; Gallium nitride; Light emitting diodes; Optical films; Polymers; Power generation; Refractive index; Substrates; Surface texture; Voltage; Flip-chip light-emitting diodes (FC LEDs); GaN; pattern sapphire; surface texture;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2007.896574

Filename

4156237