100-lm/W InGaAlP Thin-Film Light-Emitting Diodes With Buried Microreflectors

Author

Windisch, Reiner ; Butendeich, Rainer ; Illek, Stefan ; Kugler, Siegmar ; Wirth, Ralph ; Zull, Heribert ; Streubel, Klaus

Author_Institution

OSRAM Opto Semicond., Regensburg

Volume

19

Issue

10

fYear

2007

fDate

5/15/2007 12:00:00 AM

Firstpage

774

Lastpage

776

Abstract

Thin-film light-emitting diodes (LEDs) belong to the most successful LED concepts for achieving high efficiencies. The incorporation of buried microreflectors with inclined facets prevents the light generation under the top contact and bondpad and offers an additional light extraction scheme. As a result, an external quantum efficiency of 50% could be demonstrated at a wavelength of 650 nm, and a luminous efficiency of more than 100 lm/W could be achieved in the wavelength range from 595 to 620 nm

Keywords

aluminium compounds; gallium compounds; indium compounds; light emitting diodes; 595 to 620 nm; 650 nm; InGaAlP; InGaAlP thin-film light-emitting diodes; LED; buried microreflectors; external quantum efficiency; luminous efficiency; Absorption; Bonding; Fabrication; Gallium arsenide; LED lamps; Light emitting diodes; Lighting; Optical propagation; Substrates; Transistors; Light-emitting diodes (LEDs); semiconductor device fabrication;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2007.895886

Filename

4156240