Title :
100-lm/W InGaAlP Thin-Film Light-Emitting Diodes With Buried Microreflectors
Author :
Windisch, Reiner ; Butendeich, Rainer ; Illek, Stefan ; Kugler, Siegmar ; Wirth, Ralph ; Zull, Heribert ; Streubel, Klaus
Author_Institution :
OSRAM Opto Semicond., Regensburg
fDate :
5/15/2007 12:00:00 AM
Abstract :
Thin-film light-emitting diodes (LEDs) belong to the most successful LED concepts for achieving high efficiencies. The incorporation of buried microreflectors with inclined facets prevents the light generation under the top contact and bondpad and offers an additional light extraction scheme. As a result, an external quantum efficiency of 50% could be demonstrated at a wavelength of 650 nm, and a luminous efficiency of more than 100 lm/W could be achieved in the wavelength range from 595 to 620 nm
Keywords :
aluminium compounds; gallium compounds; indium compounds; light emitting diodes; 595 to 620 nm; 650 nm; InGaAlP; InGaAlP thin-film light-emitting diodes; LED; buried microreflectors; external quantum efficiency; luminous efficiency; Absorption; Bonding; Fabrication; Gallium arsenide; LED lamps; Light emitting diodes; Lighting; Optical propagation; Substrates; Transistors; Light-emitting diodes (LEDs); semiconductor device fabrication;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2007.895886
