Title :
Monolithic Integration of InGaAs–GaAs Quantum-Dot Laser and Quantum-Well Electroabsorption Modulator on Silicon
Author :
Yang, Jun ; Bhattacharya, Pallab ; Wu, Zhuang
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI
fDate :
5/15/2007 12:00:00 AM
Abstract :
Monolithic integration of an In0.5Ga0.5As-GaAs quantum-dot laser and an In0.2Ga0.8As-GaAs quantum-well electroabsorption modulator on silicon is demonstrated for the first time by using molecular beam epitaxy and focused-ion-beam etching techniques. The laser-modulator coupling coefficient is larger than 20% and the depth of modulation is 45% and 100% at 3- and 5-V reverse bias, respectively
Keywords :
III-V semiconductors; electro-optical modulation; electroabsorption; focused ion beam technology; gallium arsenide; indium compounds; integrated optics; integrated optoelectronics; molecular beam epitaxial growth; monolithic integrated circuits; quantum dot lasers; quantum well devices; semiconductor growth; sputter etching; 3 V; 5 V; InGaAs-GaAs; InGaAs-GaAs laser; focused-ion-beam etching; laser-modulator coupling coefficient; molecular beam epitaxy; monolithic integration; quantum-dot laser; quantum-well electroabsorption modulator; silicon substrate; Laser beams; Laser theory; Molecular beam epitaxial growth; Monolithic integrated circuits; Optical coupling; Optical modulation; Quantum cascade lasers; Quantum dot lasers; Quantum well lasers; Silicon; Focused-ion-beam (FIB) etching; integrated laser/modulator on silicon; quantum-confined Stark effect (QCSE);
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2007.895429
