• DocumentCode
    780477
  • Title

    Microwave penetration depth measurement for high Tc superconductors by dielectric resonators

  • Author

    Lue, Hang-Ting ; Lue, Juh-Tzeng ; Tseng, Tseung-Yuen

  • Author_Institution
    Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • Volume
    51
  • Issue
    3
  • fYear
    2002
  • fDate
    6/1/2002 12:00:00 AM
  • Firstpage
    433
  • Lastpage
    439
  • Abstract
    The penetration depth λ(T) dependence on temperatures for high Tc superconducting YBa2Cu3O7-δ thin films stored in various environments was measured by a well-designed microwave dielectric resonator. A d-wave T2 dependence was observed at low temperatures, while an exponential dependence of the penetration depth λ(T) relevant to the s wave was detected as temperature increases due to thermal fluctuation. An abnormal upturn of the penetration depth at temperatures below 10 K attributed to the surface current carried by the defect surface-induced Andreev bound states can be apparently observed without applying heavy-ion bombardment from this relatively higher frequency measurement. Readers who endeavor to start this kind of measurement can use the well-modified dielectric cavity in conjunction with the detailed measuring procedure
  • Keywords
    barium compounds; dielectric resonators; high-temperature superconductors; microwave measurement; penetration depth (superconductivity); superconducting thin films; yttrium compounds; 10 K; YBa2Cu3O7-δ thin film; YBa2Cu3O7; d-wave symmetry; dielectric resonator; high Tc superconductor; microwave penetration depth measurement; surface Andreev bound states; surface current; temperature dependence; thermal fluctuations; Dielectric measurements; Dielectric thin films; High temperature superconductors; Impurities; Microwave measurements; Scattering; Superconducting microwave devices; Superconductivity; Temperature dependence; Temperature measurement;
  • fLanguage
    English
  • Journal_Title
    Instrumentation and Measurement, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9456
  • Type

    jour

  • DOI
    10.1109/TIM.2002.1017712
  • Filename
    1017712