DocumentCode :
780494
Title :
Full C-band tunable high fibre output power electroabsorption modulator integrated with semiconductor optical amplifier
Author :
Choi, W. ; Frateschi, N. ; Zhang, J. ; Gebretsadik, H. ; Jambunathan, R. ; Bond, A.E. ; Van Norman, J. ; Vandegrift, D. ; Wanamaker, C.
Author_Institution :
T-Networks Inc., Allentown, PA, USA
Volume :
39
Issue :
17
fYear :
2003
Firstpage :
1271
Lastpage :
1272
Abstract :
The 10 Gbit/s high power output InGaAsP multiple-quantum well electroabsorption modulator, which can be tunable in the full C-band, is demonstrated. The semiconductor optical amplifier is integrated to compensate for optical losses. Operation over the full C-band, which ranges from 1530 to 1565 nm, is obtained using temperature and bias tuning. Under these operating conditions, modulated fibre output power as high as +4 dBm, dynamic extinction ratio exceeding 8.5 dB, and dispersion penalty of less than 2 dB for 1600 ps/nm of fibre, are achieved across the entire band.
Keywords :
electro-optical modulation; electroabsorption; semiconductor optical amplifiers; 10 Gbit/s; 1530 to 1565 nm; C-band; InGaAsP; bias tuning; dispersion penalty; dynamic extinction ratio; electroabsorption modulator; fibre output power; optical losses; semiconductor optical amplifier; temperature tuning;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20030801
Filename :
1231319
Link To Document :
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