مرکز منطقه ای اطلاع رساني علوم و فناوري - InAlAsSb/InGaSb double heterojunction bipolar transistor

DocumentCode :

780519

Title :

InAlAsSb/InGaSb double heterojunction bipolar transistor

Author :

Magno, R. ; Boos, J.B. ; Campbell, P.M. ; Bennett, B.R. ; Glaser, E.R. ; Tinkham, B.P. ; Ancona, M.G. ; Hobart, K.D. ; Park, D. ; Papanicolaou, N.A.

Author_Institution :

Naval Res. Lab., Washington, DC, USA

Volume :

Issue :

fYear :

2005

fDate :

3/17/2005 12:00:00 AM

Firstpage :

370

Lastpage :

371

Abstract :

An npn double heterojunction bipolar transistor has been made using In_0.27Ga_0.73Sb for the base and two different In_xAl_1-xAs_ySb_1-y alloys for the emitter and collector. It has a common emitter current gain of 25. The emitter-base voltages required for a given collector current are smaller than those of InP-based HBTs.

Keywords :

III-V semiconductors; aluminium compounds; gallium compounds; heterojunction bipolar transistors; indium compounds; AlAsSb-InGaSb; DHBT; common emitter current gain; double heterojunction bipolar transistor; npn HBT;

fLanguage :

English

Journal_Title :

Electronics Letters

Publisher :

iet

ISSN :

0013-5194

Type :

jour

DOI :

10.1049/el:20058107

Filename :

1421206

Link To Document :

https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=780519