Simple and accurate method to extract intrinsic and extrinsic base-collector capacitance of bipolar transistors

A new analytic method is presented to partition precisely the base-collector capacitance into intrinsic and extrinsic parts in bipolar transistors. It is based on base-resistance extraction measurements and requires only S-parameter measurement. This method has been successfully applied to InP/InGaAs heterojunction bipolar transistors and its accuracy has been assessed.