Title :
Time-Resolved Programming Current Measurement and Modeling for nand -type Nanodot Flash Cell
Author :
Yeh, Chun-Chen ; Holtzclaw, Karl ; Ramaswamy, Nirmal ; Gowda, Srivardhan ; Brewer, Rhett ; Graettinger, Thomas ; Min, Kyu ; Mouli, Chandra ; Parat, Krishna ; Ma, T.P.
Author_Institution :
Yale Univ., New Haven, CT
fDate :
7/1/2008 12:00:00 AM
Abstract :
The programming/erasing transient behavior of the NAND-type nanodot flash cell has been studied for the first time. By using an equivalent circuit model, the transient current through each layer in the dielectric stack can be monitored during the pulse programming/erasing. It is found that the oxide charging current leads the tunneling current during programming, and the charge built up at the storage node causes the gradual leakage current increase in the blocking dielectric. Parameters such as the current ratio of the tunnel oxide and the blocking layer and the programming efficiency of the nanodot cell can be calculated. The simulation result has been verified by the time-resolved current measurement.
Keywords :
NAND circuits; electric current measurement; equivalent circuits; flash memories; leakage currents; NAND-type nanodot flash cell; dielectric blocking; dielectric stack; equivalent circuit model; erasing transient behavior; leakage current; oxide charging current; programming transient behavior; pulse programming; pulses erasing; time-resolved current measurement; tunnel oxide; Capacitors; Current measurement; Dielectrics; Equivalent circuits; Leakage current; Monitoring; Nonvolatile memory; Schrodinger equation; Transient analysis; Voltage; Blocking layer; NAND-type Flash cell; nanodot; time-resolved current measurement; transient analysis; tunnel oxide;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2008.2000599
