Title :
Carbon-Doped Polysilicon Floating Gate for Improved Data Retention and P/E Window of Flash Memory
Author :
Pu, Jing ; Kim, Sun-Jung ; Lee, Seung-Hwan ; Kim, Young-Sun ; Kim, Sung-Tae ; Choi, Kyu-Jin ; Cho, Byung Jin
Author_Institution :
Silicon Nano Device Lab., Nat. Univ. of Singapore, Singapore
fDate :
7/1/2008 12:00:00 AM
Abstract :
We propose a novel approach to engineering floating gates (FGs) of flash memory cells, namely, carbon incorporation into polysilicon FGs. This technique demonstrated an improvement in retention and a larger program/erase Vt window, particularly for smaller capacitance coupling ratio cells, which is important for future scaled flash memory cells.
Keywords :
carbon; elemental semiconductors; flash memories; silicon; P/E window; Si:C; capacitance coupling ratio cells; carbon-doped polysilicon floating gate; flash memory cells; program/erase Vt window; Annealing; Conductivity; Data engineering; Electrons; Flash memory; Flash memory cells; Laboratories; Nonvolatile memory; Silicon carbide; Tunneling; Flash memory; floating gate (FG); retention; silicon carbide (SiC-3C);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2008.2000600
