DocumentCode
780590
Title
Design method for broadband CMOS RF LNA
Author
Gaubert, J. ; Egels, M. ; Pannier, P. ; Bourdel, S.
Author_Institution
L2MP UMR CNRS, Polytech ´´Marseille, Marseille, France
Volume
41
Issue
7
fYear
2005
fDate
3/31/2005 12:00:00 AM
Firstpage
382
Lastpage
384
Abstract
A design method for a broadband RF CMOS low noise amplifier (LNA) is presented. The shape of the transfer function fits the classical filtering response such as Butterworth or Tchebycheff. This method uses an input matching cell with only parallel LC resonators coupled with admittance inverters realised by series coupling capacitors. An LNA for the 7.2 to 8.6 GHz frequency band designed with this method in a 0.13 μm RF CMOS process shows a 3.9 dB noise figure with a voltage gain of 28 dB at 8 GHz with a power consumption of 3.9 mW and a surface consumption of 0.4 mm2.
Keywords
CMOS analogue integrated circuits; radiofrequency amplifiers; radiofrequency integrated circuits; transfer functions; wideband amplifiers; 0.13 micron; 28 dB; 3.9 mW; 7.2 to 8.6 GHz; 8 GHz; RF CMOS process; admittance inverters; amplifier design method; broadband CMOS RF LNA; low noise amplifier; parallel LC resonators; series coupling capacitors; transfer function;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20050171
Filename
1421213
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