DocumentCode :
780592
Title :
Particle-induced mitigation of SEU sensitivity in high data rate GaAs HIGFET technologies
Author :
Marshall, Paul W. ; Dale, Cheryl J. ; Weatherford, Todd R. ; La Macchia, Michael ; LaBel, Kenneth A.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
Volume :
42
Issue :
6
fYear :
1995
fDate :
12/1/1995 12:00:00 AM
Firstpage :
1844
Lastpage :
1849
Abstract :
Proton and heavy ion data on two GaAs HIGFET logic families, one source coupled (SCFL) and the other complementary (C-HIGFET), show the importance of dynamic testing and develop a new technique for mitigating SEU sensitivity by minimizing charge enhancement effects
Keywords :
III-V semiconductors; dynamic testing; field effect logic circuits; gallium arsenide; integrated circuit testing; ion beam effects; proton effects; radiation hardening (electronics); shift registers; GaAs; GaAs HIGFET logic families; SEU sensitivity mitigation; charge enhancement effects; complementary FET logic; dynamic testing; heavy ion cross-sections; high data rate GaAs HIGFET technologies; high speed logic; proton test data; shift register; source coupled FET logic; CMOS technology; Extraterrestrial measurements; FETs; Gallium arsenide; Insulation; Laboratories; Logic testing; MESFETs; Protons; Space technology;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/23.489225
Filename :
489225
Link To Document :
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