New n-Type $\hbox {TiO}_{2}$ Transparent Active Channel TFTs Fabricated With a Solution Process

New metal-oxide thin-film transistors (MOxTFTs) with a solution-processed TiO₂ transparent active channel are fabricated with a novel doping process that consists of a deposition of an ultrathin Ti layer on TiO₂ films and a brief rapid thermal annealing. Contrary to an as-prepared device which does not show any appreciable TFT actions, devices with the proposed process exhibit a clear n-type TFT behavior with a saturation mobility of 0.12 cm² V^-1ldr s^-1 and a threshold voltage of 11 V. A solution processibility and a low-cost manufacturability of TiO₂ make the presented TFTs potentially attractive for cost-sensitive applications.