Simulation aided hardening of N-channel power MOSFETs to prevent single event burnout

Author

Dachs, Charles ; Roubaud, Franck ; Palau, Jean Marie ; Bruguier, Guy ; Gasiot, Jean ; Tastet, Pierre ; Calvet, Marie-Catherine ; Calvel, Philippe

Author_Institution

Centre d´´Electron. de Montpellier, Univ. des Sci. et Tech. du Languedoc, Montpellier, France

Volume

42

Issue

6

fYear

1995

fDate

12/1/1995 12:00:00 AM

Firstpage

1935

Lastpage

1939

Abstract

2D MEDICI simulator is used to investigate hardening solutions to single-event burnout (SEE). SEE parametric dependencies such as carrier lifetime reduction, base enlargement, and emitter doping decrease have been verified and a p⁺ plug modification approach for SEE hardening of power MOSFETs is validated with simulations on actual device structures

Keywords

carrier lifetime; digital simulation; doping profiles; ion beam effects; power MOSFET; radiation hardening (electronics); semiconductor device models; semiconductor doping; 2D MEDICI simulator; N-channel power MOSFETs; SEE parametric dependencies; base enlargement; carrier lifetime reduction; device structures; emitter doping decrease; p⁺ plug modification approach; radiation hardening solutions; simulation aided hardening; single event burnout; Bipolar transistors; Charge carrier lifetime; Computational modeling; Discrete event simulation; Doping; MOSFETs; Medical simulation; Plugs; Semiconductor process modeling; Silicon;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.489237

Filename

489237