Title :
Effects of ion damage on IBICC and SEU imaging
Author :
Sexton, F. Wa ; Horn, K.M. ; Doyle, B.E. ; Shaneyfelt, M.R. ; Meisenheimer, T.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
fDate :
12/1/1995 12:00:00 AM
Abstract :
The effect of displacement and ionizing dose damage on ion-beam-induced-charge-collection (IBICC) and single-event-upset (SEU) imaging are explored. IBICC imaging is not affected by ionizing dose damage, and its dependence on displacement damage is a complex function of the structure of the samples used in this study. Degradation of the IBICC signal is controlled by displacement damage that occurs at different rates in the heavily doped substrate and lightly doped epitaxial silicon layer, leading to a non-linear dependence of inverse degradation versus ion fluence. The effect of ion exposure on the electrical performance of complementary metal-oxide-semiconductor (CMOS) static random access memories (SRAMs) is solely related to ionizing dose effects in the transistor oxides. With SEU imaging, we found that an additional region became sensitive to upset with ion fluence probably as a result of ionizing dose effects on the restoring transistors. Finally, SEU during IBICC imaging resulted in charge collection from both p-drains of a memory cell. Implications of damage on the use of these microbeam techniques are discussed
Keywords :
CMOS memory circuits; SRAM chips; integrated circuit testing; ion beam effects; CMOS; IBICC imaging; SEU imaging; SRAMs; displacement damage; heavily doped substrate; inverse degradation; ion beam induced charge collection; ion damage; ion fluence; ionizing dose damage; lightly doped epitaxial layer; memory cell; microbeam techniques; restoring transistors; single event upset; CMOS image sensors; Circuits; Degradation; Energy loss; Laboratories; Lighting control; Magnetic separation; Random access memory; SRAM chips; Substrates;
Journal_Title :
Nuclear Science, IEEE Transactions on