SiC Varactors for Dynamic Load Modulation of High Power Amplifiers

Author

Südow, Mattias ; Nemati, Hossein M. ; Thorsell, Mattias ; Gustavsson, Ulf ; Andersson, Kristoffer ; Fager, Christian ; Nilsson, Per-Åke ; Hassan, Jawad Ul ; Henry, Anne ; Janzén, Erik ; Jos, Rik ; Rorsman, Niklas

Author_Institution

Microwave Electron. Lab., Chalmers Univ. of Technol., Goteborg

Volume

29

Issue

7

fYear

2008

fDate

7/1/2008 12:00:00 AM

Firstpage

728

Lastpage

730

Abstract

SiC Schottky diode varactors with a high breakdown voltage, a high tuning ratio, and a low series resistance have been designed and fabricated. These characteristics are particularly necessary for the dynamic load modulation of high power amplifiers (PAs), which is an attractive alternative to other efficiency enhancement techniques. For a SiC Schottky diode varactor with a 50- radius fabricated by using a graded doping profile, a breakdown voltage of 40 V, a tuning range of 5.6, and a series resistance of 0.9 were achieved. The results show the great potential of this type of varactors for the use in the dynamic load modulation of high power amplifiers.

Keywords

Schottky diodes; electric breakdown; micromechanical devices; power amplifiers; semiconductor doping; silicon compounds; varactors; wide band gap semiconductors; Schottky diode varactors; SiC; breakdown voltage; dynamic load modulation; graded doping profile; high-power amplifiers; series resistance; size 50 mum; tuning ratio; Capacitance; Chemical technology; Doping profiles; High power amplifiers; Immune system; Laboratories; Schottky diodes; Silicon carbide; Transmitters; Varactors; Dynamic load modulation; Schottky; SiC; varactor;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2008.2000642

Filename

4558093