Title :
SiC Varactors for Dynamic Load Modulation of High Power Amplifiers
Author :
Südow, Mattias ; Nemati, Hossein M. ; Thorsell, Mattias ; Gustavsson, Ulf ; Andersson, Kristoffer ; Fager, Christian ; Nilsson, Per-Åke ; Hassan, Jawad Ul ; Henry, Anne ; Janzén, Erik ; Jos, Rik ; Rorsman, Niklas
Author_Institution :
Microwave Electron. Lab., Chalmers Univ. of Technol., Goteborg
fDate :
7/1/2008 12:00:00 AM
Abstract :
SiC Schottky diode varactors with a high breakdown voltage, a high tuning ratio, and a low series resistance have been designed and fabricated. These characteristics are particularly necessary for the dynamic load modulation of high power amplifiers (PAs), which is an attractive alternative to other efficiency enhancement techniques. For a SiC Schottky diode varactor with a 50- radius fabricated by using a graded doping profile, a breakdown voltage of 40 V, a tuning range of 5.6, and a series resistance of 0.9 were achieved. The results show the great potential of this type of varactors for the use in the dynamic load modulation of high power amplifiers.
Keywords :
Schottky diodes; electric breakdown; micromechanical devices; power amplifiers; semiconductor doping; silicon compounds; varactors; wide band gap semiconductors; Schottky diode varactors; SiC; breakdown voltage; dynamic load modulation; graded doping profile; high-power amplifiers; series resistance; size 50 mum; tuning ratio; Capacitance; Chemical technology; Doping profiles; High power amplifiers; Immune system; Laboratories; Schottky diodes; Silicon carbide; Transmitters; Varactors; Dynamic load modulation; Schottky; SiC; varactor;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2008.2000642
