Title :
Threshold voltage shift compensated active pixel sensor array for digital X-ray imaging in a-Si technology
Author :
Safavian, N. ; Lai, J. ; Rowlands, J. ; Nathan, A.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Waterloo, Ont., Canada
fDate :
3/31/2005 12:00:00 AM
Abstract :
A new active pixel sensor for X-ray digital imaging using amorphous silicon thin-film transistors (a-Si TFTs) is proposed. Simulation results show that this new APS structure is fully capable of compensating for variations in threshold voltage (VT) of a-Si TFTs under prolonged gate voltage stress.
Keywords :
X-ray imaging; amorphous semiconductors; image sensors; silicon; thin film transistors; APS structure; Si; a-Si technology; active pixel sensor array; amorphous silicon thin-film transistors; digital X-ray imaging; prolonged gate voltage stress; threshold voltage shift;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20058232
