Influence of solar cycle on SPOT-1,-2,-3 upset rates

Author

Ecoffet, R. ; Prieur, M. ; Del Castillo, M.F. ; Duzellier, S. ; Falguere, D.

Author_Institution

CNES, Toulouse, France

Volume

42

Issue

6

fYear

1995

fDate

12/1/1995 12:00:00 AM

Firstpage

1983

Lastpage

1987

Abstract

The French SPOT Earth observation system has now been used for more than eight years. A former study had presented results obtained during the first years of service which took place in solar minimum activity conditions. This paper presents the evolution of the upset rate measured on the 1088 1-kbit memories (CMOS SRAMs) of the on-board computer (OBC) throughout minimum and maximum solar activity. Upset rate is well correlated with solar cycle. Little influence of solar flares was observed. Most critical periods are transitions between phases of the solar cycle. Comparison is made with model predictions

Keywords

CMOS memory circuits; SRAM chips; aerospace testing; integrated circuit modelling; integrated circuit testing; ion beam effects; ion beams; space vehicle electronics; 1 Kbit; CMOS; Earth observation system; SPOT-1; SPOT-2; SPOT-3; SRAMs; model predictions; on-board computer; semiconductor memories; solar cycle; upset rates; CMOS technology; Circuits; Earth; Extraterrestrial measurements; Fabrication; Memory architecture; Orbits; Predictive models; Random access memory; Satellites;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.489243

Filename

489243