Title :
A Novel Multiple-Gate Polycrystalline Silicon Nanowire Transistor Featuring an Inverse-T Gate
Author :
Lin, Horng Chih ; Hsu, Hsing Hui ; Su, Chun Jung ; Huang, Tiao Yuan
Author_Institution :
Dept. of Electron. Eng. & Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu
fDate :
7/1/2008 12:00:00 AM
Abstract :
A novel multiple-gate field-effect transistor with poly-Si nanowire (NW) channels is proposed and fabricated using a simple process flow. In the proposed structure, poly-Si NW channels are formed with sidewall spacer etching technique, and are surrounded by an inverse-T gate and a top gate. When the two gates are connected together to drive the NW channels, dramatic performance enhancement as compared with the cases of single- gate operation is observed. Moreover, subthreshold swing as low as 103 mV/dec at Vd = 2 V is recorded. Function of using the top gate bias to modulate the threshold voltage of device operation driven by the inverse-T gate biases is also investigated in this letter.
Keywords :
elemental semiconductors; etching; field effect transistors; nanowires; silicon; Si; inverse-T gate; multiple-gate field-effect transistor; multiple-gate polycrystalline silicon nanowire transistor; sidewall spacer etching technique; threshold voltage; Controllability; Crystallization; Etching; FETs; Fabrication; Lithography; Nanoscale devices; Silicon; Threshold voltage; Transistors; Field-effect transistor; multiple gate (MG); nanowire (NW); poly-Si;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2008.2000654
