Title :
Germanium Source and Drain Stressors for Ultrathin-Body and Nanowire Field-Effect Transistors
Author :
Liow, Tsung-Yang ; Kian-Ming Tan ; Lee, Rinus T P ; Zhu, Ming ; Tan, B.L.-H. ; Balasubramanian, N. ; Yeo, Yee-Chia
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore
fDate :
7/1/2008 12:00:00 AM
Abstract :
Pure germanium (Ge) source and drain (S/D) stressors are integrated with ultrathin-body (UTB) and nanowire field-effect transistors (FETs). This is the first report of the integration of Ge S/D stressors in FETs. The Ge S/D stressors induce a large compressive stress in the channel, resulting in up to 80% IDsat enhancement in UTB-FETs. Electrical results further show that increased substrate compliance effects allow nanowire FETs to achieve even higher levels (96%) of strain-induced enhancement.
Keywords :
field effect transistors; nanowires; nanowire FET; nanowire field-effect transistors; source and drain stressors; strain-induced enhancement; substrate compliance effects; ultrathin-body field-effect transistors; Capacitive sensors; Compressive stress; Epitaxial growth; Etching; FETs; Germanium silicon alloys; Lattices; Microelectronics; Silicon germanium; Substrates; Compliance; FinFET; germanium; multiple-gate transistor (MuGFET); strain; stress;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2008.2000669
