Title :
Mobility Scaling in Short-Channel Length Strained Ge-on-Insulator P-MOSFETs
Author :
Bedell, Stephen W. ; Majumdar, Amlan ; Ott, John A. ; Arnold, John ; Fogel, Keith ; Koester, Steven J. ; Sadana, Devendra K.
Author_Institution :
IBM T. J. Watson Res. Center, Yorktown Heights, NY
fDate :
7/1/2008 12:00:00 AM
Abstract :
The hole transport characteristics in partially strained (0.5%) Ge p-channel MOSFETs formed on silicon-germanium-on-insulator (SGOI) substrates were investigated for gate lengths down to 65 nm. We demonstrate that high hole mobility is maintained down to the shortest channel lengths. The channel conductance from these devices is measured and compared to state-of-the-art high-performance Si channel P-MOSFETs.
Keywords :
Ge-Si alloys; MOSFET; hole mobility; silicon-on-insulator; substrates; Ge p-channel MOSFET; Ge-on-insulator; Si channel P-MOSFET; channel conductance; hole mobility; hole transport characteristics; mobility scaling; short-channel length; silicon-germanium-on-insulator substrates; Capacitive sensors; Character generation; Conducting materials; Dielectric substrates; FETs; Fabrication; Germanium silicon alloys; MOSFET circuits; Silicon germanium; Tin; Germanium; MOSFET; silicon-germanium-on-insulator (SGOI); strain;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2008.2000713
