Alpha particle simulation of space radiation damage effects in semiconductor devices

Author

Colerico, C.W. ; Serreze, H.B. ; Messenger, S.R. ; Xapsos, M.A. ; Burke, E.A.

Author_Institution

Spire Corp., Bedford, MA, USA

Volume

42

Issue

6

fYear

1995

fDate

12/1/1995 12:00:00 AM

Firstpage

2089

Lastpage

2094

Abstract

We describe a method that uses an ²⁴¹Am alpha particle source to simulate effects of space radiation damage to semiconductor devices. By applying a unique combination of analytic and numerical techniques to data obtained from alpha irradiation experiments, device response to protons and other radiation types can be predicted. The techniques enable the interpretation of the alpha data by deriving the damage-depth profiles for both ionizing and nonionizing damage in InP devices. The results agree well when compared to the results from proton and electron irradiation of the same type of devices

Keywords

III-V semiconductors; alpha-particle effects; electron beam effects; indium compounds; photodiodes; proton effects; semiconductor device testing; solar cells; ²⁴¹Am alpha particle source; InP; InP devices; alpha irradiation; alpha particle simulation; analytic techniques; damage-depth profiles; dark I-V behavior; electron irradiation; ionizing damage; nonionizing damage; numerical techniques; photodiodes; proton irradiation; proton response; semiconductor devices; solar cells; space radiation damage effects; Alpha particles; Electrons; Energy loss; Laboratories; Protons; Satellites; Semiconductor devices; Semiconductor materials; Testing; Voltage;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.489257

Filename

489257