Title :
Alpha particle simulation of space radiation damage effects in semiconductor devices
Author :
Colerico, C.W. ; Serreze, H.B. ; Messenger, S.R. ; Xapsos, M.A. ; Burke, E.A.
Author_Institution :
Spire Corp., Bedford, MA, USA
fDate :
12/1/1995 12:00:00 AM
Abstract :
We describe a method that uses an 241Am alpha particle source to simulate effects of space radiation damage to semiconductor devices. By applying a unique combination of analytic and numerical techniques to data obtained from alpha irradiation experiments, device response to protons and other radiation types can be predicted. The techniques enable the interpretation of the alpha data by deriving the damage-depth profiles for both ionizing and nonionizing damage in InP devices. The results agree well when compared to the results from proton and electron irradiation of the same type of devices
Keywords :
III-V semiconductors; alpha-particle effects; electron beam effects; indium compounds; photodiodes; proton effects; semiconductor device testing; solar cells; 241Am alpha particle source; InP; InP devices; alpha irradiation; alpha particle simulation; analytic techniques; damage-depth profiles; dark I-V behavior; electron irradiation; ionizing damage; nonionizing damage; numerical techniques; photodiodes; proton irradiation; proton response; semiconductor devices; solar cells; space radiation damage effects; Alpha particles; Electrons; Energy loss; Laboratories; Protons; Satellites; Semiconductor devices; Semiconductor materials; Testing; Voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
