Title :
1/f noise in self-aligned Si/SiGe heterojunction bipolar transistor
Author :
Plana, R. ; Escotte, L. ; Roux, J.P. ; Graffeuil, J. ; Gruhle, A. ; Kibbel, H.
Author_Institution :
Univ. Paul Sabatier, Toulouse, France
Abstract :
The first characterization of the low-frequency noise in a self-aligned Si/SiGe heterojunction bipolar transistor (HBT) is reported. The observed low-frequency noise exhibits a pure 1/f shape, probably related to carrier number fluctuations at the pseudomorphic emitter-base heterointerface.<>
Keywords :
1/f noise; Ge-Si alloys; elemental semiconductors; fluctuations; heterojunction bipolar transistors; semiconductor device noise; semiconductor materials; silicon; 1/f noise; LF noise; Si-SiGe; carrier number fluctuations; characterization; heterojunction bipolar transistor; low-frequency noise; pseudomorphic emitter-base heterointerface; self-aligned HBT; 1f noise; Bipolar transistors; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Low-frequency noise; Microwave devices; Noise generators; Noise shaping; Silicon germanium;
Journal_Title :
Electron Device Letters, IEEE
