DocumentCode
780942
Title
Low-power 300 Mbit/s OEIC with large-area photodiode
Author
Hein, H. ; Förtsch, M. ; Zimmermann, H.
Author_Institution
Inst. for Electr. Meas.s & Circuit Design, Vienna Univ. of Technol., Austria
Volume
41
Issue
7
fYear
2005
fDate
3/31/2005 12:00:00 AM
Firstpage
436
Lastpage
438
Abstract
The sensor realised in a low-cost 0.6 μm BiCMOS process includes a 400 μm-diameter photodiode. By parallelising the input transistor a minimum average optical input power of -24.7 dBm at a data rate of 300 Mbit/s is achieved. The power consumption of the transimpedance amplifier is less than 6 mW.
Keywords
BiCMOS integrated circuits; amplifiers; integrated optoelectronics; low-power electronics; nanoelectronics; optical sensors; photodiodes; sensors; 0.6 micron; 300 Mbit/s; 400 micron; input transistor parallelising; large-area photodiode; low-cost BiCMOS process; low-power OEIC; transimpedance amplifier;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20058067
Filename
1421249
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