Title :
Ultrahigh fT and fmax new self-alignment InP/InGaAs HBT´s with a highly Be-doped base layer grown by ALE/MOCVD
Author :
Shigematsu, H. ; Iwai, T. ; Matsumiya, Y. ; Ohnishi, H. ; Ueda, O. ; Fujii, T.
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
Abstract :
We report on a new self-alignment (SA) process and microwave performance of ALE/MOCVD grown InP/InGaAs heterojunction bipolar transistors (HBT´s) with a base doping concentration of 1×1020 cm/sup -3/. We obtained fT of 161 GHz and fmax of 167 GHz with a 2×10 μm emitter. These high values indicate the best performance of InP/InGaAs HBT´s ever reported, in so far as we know. These values were attained by reducing the base resistance using ALE/MOCVD and base-collector capacitance using a new SA process. These results indicate the great potential of these devices for ultrahigh-speed application.
Keywords :
III-V semiconductors; beryllium; gallium arsenide; heavily doped semiconductors; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; millimetre wave bipolar transistors; semiconductor growth; vapour phase epitaxial growth; 161 GHz; 167 GHz; ALE/MOCVD; HBT; InP-InGaAs:Be; base doping concentration; base resistance reduction; base-collector capacitance reduction; heterojunction bipolar transistors; highly Be-doped base layer; microwave performance; self-alignment process; ultrahigh-speed application; Electrodes; Etching; Fabrication; Frequency; Gold; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; MOCVD; Polyimides;
Journal_Title :
Electron Device Letters, IEEE
