DocumentCode
780955
Title
Improvement of External Extraction Efficiency in GaN-Based LEDs by 
Nanosphere Lithography
Author
Hsieh, Min Yann ; Wang, Cheng Yin ; Chen, Liang Yi ; Lin, Tzu Pu ; Ke, Min Yung ; Cheng, Yun Wei ; Yu, Yi Cheng ; Chen, Cheng Pin ; Yeh, Dong Ming ; Lu, Chih Feng ; Huang, Chi Feng ; Yang, C.C. ; Huang, Jian Jang
Author_Institution
Grad. Inst. of Photonics & Optoelectron. & the Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei
Volume
29
Issue
7
fYear
2008
fDate
7/1/2008 12:00:00 AM
Firstpage
658
Lastpage
660
Abstract
A practical approach to fabricate textured GaN-based light-emitting diodes (LEDs) by nanosphere lithography is presented. By spin coating a monolayer of SiO2 nanoparticles as the mask, textured LEDs can be fabricated. Both textured p-GaN and textured indium tin oxide LEDs show significant improvement over conventional LEDs without damaging the electrical characteristics. The results show that the method is promising for manufacturing low-cost high-efficient GaN-based LEDs.
Keywords
III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; nanolithography; nanoparticles; silicon compounds; spin coating; wide band gap semiconductors; GaN; GaN-based LED; GaN-based light-emitting diodes; SiO2; SiO2 nanoparticles; SiO2 nanosphere lithography; electrical characteristics; external extraction efficiency; indium tin oxide LED; spin coating; Etching; Gallium nitride; Indium tin oxide; Light emitting diodes; Lithography; Nanoparticles; Rough surfaces; Surface resistance; Surface roughness; Surface texture; Extraction efficiency; light-emitting diodes (LEDs); nanosphere lithography;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2008.2000918
Filename
4558112
Link To Document