Title :
Ring oscillators with monolithically integrated-optical readout based on GaAs-AlGaAs FET-SEED technology
Author :
Woodward, T.K. ; Novotny, R.A. ; Lentine, A.L. ; Chirovsky, L.M.F. ; D´Asaro, L.A. ; Hui, S. ; Focht, M.W. ; Guth, G.D. ; Smith, L.E. ; Leibenguth, R.E.
Author_Institution :
AT&T Bell Labs., Holmdel, NJ, USA
Abstract :
Ring oscillators having integrated-optical readout are realized in GaAs-AlGaAs field-effect transistor self-electro-optic-effect-device (FET-SEED) technology-a monolithic integration technology for FET´s and normal-incidence multiple-quantum-well modulators and detectors. Good agreement between simulated and measured DC-inverter-transfer characteristics is shown. At one bias point, ring oscillator frequencies correspond to unity fan-in and fan-out delay values of 129.5 ps/stage. The power-delay product at this bias point was 306 fj. Measurements were made on circuits whose transistors had a transconductance of about 80 mS/mm. Simulations of inverter delay are discussed, including load capacitances, and are found to be in good agreement with experiment.<>
Keywords :
III-V semiconductors; SEEDs; aluminium compounds; electro-optical modulation; field effect digital integrated circuits; gallium arsenide; integrated circuit technology; integrated optoelectronics; optical interconnections; oscillators; semiconductor quantum wells; 129.5 ps; 80 mS/mm; DC-inverter-transfer characteristics; FET-SEED technology; GaAs-AlGaAs; MQW detectors; MQW modulators; field-effect transistor; inverter delay; load capacitances; monolithic integration technology; monolithically integrated-optical readout; multiple-quantum-well modulators; normal-incidence type; ring oscillators; self-electro-optic-effect-device; Circuit simulation; Delay; Detectors; FETs; Frequency; Integrated circuit measurements; Monolithic integrated circuits; Quantum well devices; Ring oscillators; Transconductance;
Journal_Title :
Electron Device Letters, IEEE
