DocumentCode :
780960
Title :
The energy dependence of lifetime damage constants in GaAs LEDs for 1-500 MeV protons
Author :
Barry, A.L. ; Houdayer, A.J. ; Hinrichsen, P.F. ; Letourneau, W.G. ; Vincent, J.
Author_Institution :
Communication Res. Centre, Ottawa, Ont., Canada
Volume :
42
Issue :
6
fYear :
1995
fDate :
12/1/1995 12:00:00 AM
Firstpage :
2104
Lastpage :
2107
Abstract :
The energy dependence of lifetime damage constants have been measured in GaAs LEDs for 1-500 MeV protons. At energies below about 100 MeV, the dependence is close to that expected based on proportionality between non-ionizing energy loss (NIEL) and damage constants. In the 150-500 MeV range, however, a monotonic decrease in damage constant is found, at variance with published calculations which show an increase with energy. Two possible explanations are suggested; an inadequate model for the calculated energy dependence of NIEL, or the creation of damage clusters which have less effect than the deposition of an equivalent energy in the form of point defects
Keywords :
III-V semiconductors; carrier lifetime; gallium arsenide; light emitting diodes; minority carriers; point defects; proton effects; 1 to 500 MeV; GaAs; GaAs LEDs; damage clusters; displacement damage dose; energy dependence; equivalent energy deposition; lifetime damage constants; minority carrier lifetime; nonionizing energy loss; point defects; proton irradiation; Degradation; Energy loss; Energy measurement; Gallium arsenide; Lattices; Light emitting diodes; Particle beams; Proton accelerators; Silicon compounds; Silicon devices;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/23.489259
Filename :
489259
Link To Document :
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