DocumentCode :
780976
Title :
High-frequency FinFET model
Author :
Wang, J. ; Hutchens, C. ; Popp, J. ; Rowland, J. ; Zhang, Y.
Author_Institution :
Dept. of Electr. & Comput. Eng., Oklahoma State Univ., Stillwater, OK, USA
Volume :
41
Issue :
7
fYear :
2005
fDate :
3/31/2005 12:00:00 AM
Firstpage :
443
Lastpage :
444
Abstract :
An RF model of FinFET is presented; its transition frequency (fT) and unit power gain frequency (fmax) can reach 40 and 80 GHz, respectively. The parameter extraction procedure is described. A good agreement is obtained up to 10 GHz.
Keywords :
MOSFET; S-parameters; equivalent circuits; microwave field effect transistors; semiconductor device models; 45 MHz to 10 GHz; FinFET; MOSFET; RF model; equivalent circuit; high-frequency model; parameter extraction procedure; transition frequency; unit power gain frequency;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20057665
Filename :
1421253
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=780976
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