• DocumentCode
    780976
  • Title

    High-frequency FinFET model

  • Author

    Wang, J. ; Hutchens, C. ; Popp, J. ; Rowland, J. ; Zhang, Y.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Oklahoma State Univ., Stillwater, OK, USA
  • Volume
    41
  • Issue
    7
  • fYear
    2005
  • fDate
    3/31/2005 12:00:00 AM
  • Firstpage
    443
  • Lastpage
    444
  • Abstract
    An RF model of FinFET is presented; its transition frequency (fT) and unit power gain frequency (fmax) can reach 40 and 80 GHz, respectively. The parameter extraction procedure is described. A good agreement is obtained up to 10 GHz.
  • Keywords
    MOSFET; S-parameters; equivalent circuits; microwave field effect transistors; semiconductor device models; 45 MHz to 10 GHz; FinFET; MOSFET; RF model; equivalent circuit; high-frequency model; parameter extraction procedure; transition frequency; unit power gain frequency;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20057665
  • Filename
    1421253
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=780976