Title :
Low-Temperature-Processed Inorganic Gate Dielectrics for Plastic-Substrate-Based Organic Field-Effect Transistors
Author :
Tan, H.S. ; Cahyadi, T. ; Wang, Z.B. ; Lohani, A. ; Tsakadze, Z. ; Zhang, S. ; Zhu, F.R. ; Mhaisalkar, S.G.
Author_Institution :
Sch. of Mater. Sci. & Eng., Nanyang Technol. Univ., Singapore
fDate :
7/1/2008 12:00:00 AM
Abstract :
Low-temperature-processed inorganic gate dielectrics were employed here to yield high-performance organic field-effect transistors (FETs) on flexible plastic substrates. SiNx dielectrics deposited at room temperature and SiNx/sol-gel silica dielectric bilayer processed below 100degC were demonstrated to be viable gate dielectric materials, with the latter yielding effective field-effect mobilities of ~ 1 cm2/Vldrs at operating voltages of under -5 V with an on-off current ratio in the range of 105. The enhancement in device performance was attributed to an improved semiconductor-dielectric interface and a larger grain size of the pentacene deposited on the bilayer dielectrics. The flexibility of FETs fabricated on polyester substrates was also demonstrated with insignificant changes in device performance upon subjecting the devices to strains of 2.27%.
Keywords :
field effect transistors; grain size; organic semiconductors; semiconductor-insulator boundaries; silicon compounds; SiNx; effective field-effect mobilities; flexible plastic substrates; grain size; low-temperature-processed inorganic gate dielectrics; on-off current ratio; organic field-effect transistors; pentacene; plastic-substrate-based organic field-effect transistors; semiconductor-dielectric interface; voltage -5 V; Dielectric materials; Dielectric substrates; FETs; Grain size; OFETs; Pentacene; Plastics; Silicon compounds; Temperature distribution; Voltage; $hbox{SiN}_{x}$ dielectric; Flexibility; organic field-effect transistors (OFETs); sol–gel (SG) dielectric;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2008.922315