Title :
The effect of power supply voltage scaling on the total dose radiation response of fully-depleted SOI MOS transistors
Author :
Liu, S.T. ; Jenkins, W.C.
Author_Institution :
Solid State Electron. Center, Honeywell Inc., Plymouth, MN, USA
fDate :
12/1/1995 12:00:00 AM
Abstract :
The radiation induced front channel threshold voltage shift (ΔVtl) of fully-depleted MOSFETs fabricated in SIMOX is investigated and analyzed as a function of power supply voltage (VDD) from 5.5 to 1.2 volts. This work shows that the expected improvement in front channel radiation hardness by reducing V DD is not fully realized due to (1) a radiation induced off-set voltage at VDD~0 V, and (2) enhanced coupling of the buried oxide charge to the front channel
Keywords :
MOSFET; SIMOX; gamma-ray effects; radiation hardening (electronics); 5.5 to 1.2 V; SIMOX; buried oxide charge; front channel threshold voltage shift; fully-depleted SOI MOS transistor; off-set voltage; power supply voltage scaling; radiation hardness; total dose radiation response; Laboratories; Low power electronics; MOSFETs; Power supplies; Silicon; Solid state circuits; Temperature; Testing; Threshold voltage; Transistors;
Journal_Title :
Nuclear Science, IEEE Transactions on
