• DocumentCode
    780985
  • Title

    The effect of power supply voltage scaling on the total dose radiation response of fully-depleted SOI MOS transistors

  • Author

    Liu, S.T. ; Jenkins, W.C.

  • Author_Institution
    Solid State Electron. Center, Honeywell Inc., Plymouth, MN, USA
  • Volume
    42
  • Issue
    6
  • fYear
    1995
  • fDate
    12/1/1995 12:00:00 AM
  • Firstpage
    2122
  • Lastpage
    2126
  • Abstract
    The radiation induced front channel threshold voltage shift (ΔVtl) of fully-depleted MOSFETs fabricated in SIMOX is investigated and analyzed as a function of power supply voltage (VDD) from 5.5 to 1.2 volts. This work shows that the expected improvement in front channel radiation hardness by reducing V DD is not fully realized due to (1) a radiation induced off-set voltage at VDD~0 V, and (2) enhanced coupling of the buried oxide charge to the front channel
  • Keywords
    MOSFET; SIMOX; gamma-ray effects; radiation hardening (electronics); 5.5 to 1.2 V; SIMOX; buried oxide charge; front channel threshold voltage shift; fully-depleted SOI MOS transistor; off-set voltage; power supply voltage scaling; radiation hardness; total dose radiation response; Laboratories; Low power electronics; MOSFETs; Power supplies; Silicon; Solid state circuits; Temperature; Testing; Threshold voltage; Transistors;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.489262
  • Filename
    489262
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=780985