Title :
High performance MEMS inductors fabricated on localised and planar thick SiO2 layer
Author :
Sun, J. ; Miao, J.
Author_Institution :
Sch. of Mech. & Prod. Eng., Nanyang Technol. Univ., Singapore, Singapore
fDate :
3/31/2005 12:00:00 AM
Abstract :
High performance MEMS RF inductors fabricated on thick oxide layers using a process platform so-called SiDeox (silicon deep etching and oxidation) technology are presented. Deep reactive ion etching (DRIE) was performed to form 20 μm deep trenches of 2 μm wide trenches and silicon beams in the silicon substrate. DRIE etched silicon wafer was then thermally oxidised in the thermal furnace to form 20 μm-thick SiO2. RF inductors were fabricated on this thick SiO2 with high quality factors and self-resonance frequency.
Keywords :
Q-factor; high-temperature techniques; inductors; micromechanical devices; oxidation; silicon compounds; sputter etching; 2 micron; 20 micron; DRIE etched silicon wafer; SiDeox technology; SiO2; deep reactive ion etching; high performance MEMS RF inductors; localised SiO2 layer; planar thick SiO2 layer; process platform; quality factor; self-resonance frequency; silicon beams; silicon deep etching; silicon substrate; thermal furnace; thermal oxidation; thick oxide layers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20050086
