• DocumentCode
    780997
  • Title

    High performance MEMS inductors fabricated on localised and planar thick SiO2 layer

  • Author

    Sun, J. ; Miao, J.

  • Author_Institution
    Sch. of Mech. & Prod. Eng., Nanyang Technol. Univ., Singapore, Singapore
  • Volume
    41
  • Issue
    7
  • fYear
    2005
  • fDate
    3/31/2005 12:00:00 AM
  • Firstpage
    446
  • Lastpage
    447
  • Abstract
    High performance MEMS RF inductors fabricated on thick oxide layers using a process platform so-called SiDeox (silicon deep etching and oxidation) technology are presented. Deep reactive ion etching (DRIE) was performed to form 20 μm deep trenches of 2 μm wide trenches and silicon beams in the silicon substrate. DRIE etched silicon wafer was then thermally oxidised in the thermal furnace to form 20 μm-thick SiO2. RF inductors were fabricated on this thick SiO2 with high quality factors and self-resonance frequency.
  • Keywords
    Q-factor; high-temperature techniques; inductors; micromechanical devices; oxidation; silicon compounds; sputter etching; 2 micron; 20 micron; DRIE etched silicon wafer; SiDeox technology; SiO2; deep reactive ion etching; high performance MEMS RF inductors; localised SiO2 layer; planar thick SiO2 layer; process platform; quality factor; self-resonance frequency; silicon beams; silicon deep etching; silicon substrate; thermal furnace; thermal oxidation; thick oxide layers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20050086
  • Filename
    1421255
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=780997