Nonresonant detection of terahertz radiation by silicon-on-insulator MOSFETs

Author

Pala, N. ; Teppe, F. ; Veksler, D. ; Deng, Y. ; Shur, M.S. ; Gaska, R.

Author_Institution

Sensor Electronic Technology, Columbia, SC, USA

Volume

41

Issue

7

fYear

2005

fDate

3/31/2005 12:00:00 AM

Firstpage

447

Lastpage

449

Abstract

The detection of subterahertz (200 GHz) radiation by silicon-on-insulator MOSFETs with submicron gate lengths in the temperature range from ∼8 to 350 K is reported. The photoresponse measured against gate voltage exhibited a maximum near the threshold voltage with the amplitude decreasing with decreasing temperature. The photoresponse reached the maximum at the gate bias close to the threshold voltage and increased with an increase of the drain-to-source current. This behaviour agrees with the mechanism linking the photoresponse to the excitation of the overdamped plasma waves in the transistor channel. The observed effect could be used for non-destructive, contactless testing of silicon very large integrated circuits in situ.

Keywords

MOSFET; VLSI; logic testing; plasma waves; radiation detection; silicon-on-insulator; transistors; 200 GHz; 8 to 350 K; MOSFET; Si; contactless testing; drain-to-source current; gate voltage; nondestructive testing; nonresonant detection; overdamped plasma waves; photoresponse; silicon-on-insulator; submicron gate lengths; subterahertz radiation detection; terahertz radiation; threshold voltage; transistor channel; very large integrated circuits;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20058182

Filename

1421256