DocumentCode
781055
Title
Improvement of Resistive Switching in 
Using New RESET Mode
Author
Yin, M. ; Zhou, P. ; Lv, H.B. ; Xu, J. ; Song, Y.L. ; Fu, X.F. ; Tang, T.A. ; Chen, B.A. ; Lin, Y.Y.
Author_Institution
Sch. of Microelectron., Fudan Univ., Shanghai
Volume
29
Issue
7
fYear
2008
fDate
7/1/2008 12:00:00 AM
Firstpage
681
Lastpage
683
Abstract
Wide dispersions of memory switching parameters are observed in resistive random access memory based on Al/CuxO/Cu structure. Moreover, the switching instability induced by these dispersions is studied. In this letter, a ramped-pulse series operation method is put forward, which can improve switching stability and cycling endurance remarkably. A method for minimizing the dispersion of Vreset by optimizing the amplitude of pulse is proposed further. The write-read-erase-read operations can be over 8 times103 cycles without degradation by using the new operation mode. The role of Joule heating behind this behavior of Al/CuxO/Cu device is discussed.
Keywords
circuit stability; copper compounds; random-access storage; switching circuits; Al-CuxO-Cu; Joule heating; memory switching parameters; ramped-pulse series operation; reset mode; resistive random access memory; resistive switching; switching instability; wide dispersions; write-read-erase-read operations; Degradation; Electrodes; Optimization methods; Pulse generation; Random access memory; Rapid thermal processing; Semiconductor films; Stability; Switches; Voltage; $hbox{Cu}_{x}hbox{O}$
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2008.923319
Filename
4558120
Link To Document