Novel Silicon-Controlled Rectifier (SCR) for High-Voltage Electrostatic Discharge (ESD) Applications

Author

Liu, Zhiwei ; Liou, Juin J. ; Vinson, Jim

Author_Institution

Sch. of Electr. Eng. & Comput. Sci., Univ. of Central Florida, Orlando, FL

Volume

29

Issue

7

fYear

2008

fDate

7/1/2008 12:00:00 AM

Firstpage

753

Lastpage

755

Abstract

Electrostatic discharge (ESD) protection for high-voltage integrated circuits is challenging due to the requirement of high holding voltage to minimize the risk of ESD-induced latchup and electrical overstress. In this letter, a new silicon-controlled rectifier (SCR) is developed for this particular application. The SCR is designed based on the concept that the holding voltage can be increased by reducing the emitter injection efficiency in the SCR. This is accomplished by using a segmented emitter topology. Experimental data show that the new SCR can possess a holding voltage that is larger than 40 V and a failure current I_t2 that is higher than 28 mA/mum.

Keywords

electrostatic discharge; power integrated circuits; thyristors; Si; emitter injection efficiency; failure current; high-voltage electrostatic discharge applications; high-voltage integrated circuits; segmented emitter topology; silicon-controlled rectifier; Application specific integrated circuits; Clamps; Computer science; Electrostatic discharge; Protection; Rectifiers; Resistors; Thyristors; Topology; Voltage; Electrostatic discharge (ESD); holding voltage; latchup immunity; transmission line pulsing (TLP);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2008.923711

Filename

4558124