Title :
10-Gb/s data transmission using BCB passivated 1.55-μm InGaAlAs-InP VCSELs
Author :
Hofmann, W. ; Zhu, N.H. ; Ortsiefer, M. ; Bohm, G. ; Rosskopf, J. ; Chao, L. ; Zhang, S. ; Maute, M. ; Amann, M.-C.
Author_Institution :
Walter Schottky Inst., Tech. Univ. Munchen, Garching, Germany
Abstract :
Molecular-beam-epitaxy-grown InGaAlAs-InP vertical-cavity surface-emitting lasers with buried tunnel junction for 1.55-μm wavelength, passivated with benzocyclobutene (BCB) and coplanar contacts are presented. The devices show 3-dB modulation frequencies above 8 GHz (small signal modulation) and wide open eye diagrams up to 10 Gb/s over more than 4.6-km ITU-T G.653 fiber (data transmission experiment).
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; molecular beam epitaxial growth; optical communication equipment; optical fibre communication; organic compounds; passivation; semiconductor growth; semiconductor lasers; surface emitting lasers; 1.55 mum; 10 Gbit/s; BCB passivation; InGaAlAs-InP; InGaAlAs-InP VCSEL; benzocyclobutene; buried tunnel junction; coplanar contacts; molecular-beam-epitaxy; vertical-cavity surface-emitting lasers; Damping; Data communication; Fiber lasers; Laser modes; Optical surface waves; Resonance; Resonant frequency; Semiconductor lasers; Surface emitting lasers; Vertical cavity surface emitting lasers; InP; optical modulation; semiconductor lasers; telecommunications; vertical-cavity surface-emitting lasers (VCSELs);
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2005.863184
