A 60-GHz high efficiency monolithic power amplifier using 0.1-μm PHEMT´s

Author

Seng-Woon Chen ; Smith, P.M. ; Liu, S.-M.J. ; Kopp, W.F. ; Rogers, T.J.

Author_Institution

Martin Marietta Labs., Syracuse, NY, USA

Volume

5

Issue

6

fYear

1995

fDate

6/1/1995 12:00:00 AM

Firstpage

201

Lastpage

203

Abstract

We report the development of a V-band monolithic power amplifier based on 0.1 μm gate-length pseudomorphic HEMT´s. The two-stage amplifier has demonstrated record performance at 60 GHz on the first design pass: 272 mW output power with 9.4 dB power gain and 24% power-added efficiency. The amplifier was designed for high-reliability communications applications, with passivation, good linearity and excellent thermal properties, and has been fabricated on 3-in. wafers with high yield and excellent uniformity-on one typical wafer, consistency of MMIC output power is better than /spl plusmn/0.5 dB with an associated total yield through RF test of 58%.

Keywords

HEMT integrated circuits; MMIC power amplifiers; field effect MIMIC; millimetre wave amplifiers; power amplifiers; power integrated circuits; 0.1 micron; 24 percent; 272 mW; 60 GHz; 9.4 dB; EHF; MIMIC; MM-wave amplifier; MMIC; PHEMT; V-band; high efficiency power amplifier; high-reliability communications applications; monolithic power amplifier; pseudomorphic HEMT; two-stage amplifier; HEMTs; High power amplifiers; Linearity; MMICs; Passivation; Performance gain; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.386131

Filename

386131