Title :
A new gate driver integrated circuit for IGBT devices with advanced protections
Author :
Dulau, Laurent ; Pontarollo, Serge ; Boimond, Anthony ; Garnier, Jean-François ; Giraudo, Nicole ; Terrasse, Olivier
Author_Institution :
SGS-Thomson Microelectron., Grenoble, France
Abstract :
The aim of this paper is to discuss new solutions in the design of insulated gate bipolar transistor (IGBT) gate drivers with advanced protections such as two-level turn-on to reduce peak current when turning on the device, two-level turn-off to limit over-voltage when the device is turned off, and an active Miller clamp function that acts against cross conduction phenomena. Afterwards, we describe a new circuit which includes a two-level turn-off driver and an active Miller clamp function. Tests and results for these advanced functions are discussed, with particular emphasis on the influence of an intermediate level in a two-level turn-off driver on overshoot across the IGBT.
Keywords :
driver circuits; insulated gate bipolar transistors; integrated circuit design; overvoltage protection; IGBT devices; active Miller clamp function; cross conduction phenomena; gate driver integrated circuit; insulated gate bipolar transistors; overvoltage limit; peak current reduction; two-level turn-on driver; Bipolar transistors; Capacitance; Circuit testing; Clamps; Driver circuits; Insulated gate bipolar transistors; MOSFET circuits; Power MOSFET; Protection; Voltage; Active Miller clamp; bipolar CMOS DMOS (BCD); cross conduction; insulated gate bipolar transistor (IGBT); overshoot; peak current; two-level driver;
Journal_Title :
Power Electronics, IEEE Transactions on
DOI :
10.1109/TPEL.2005.861115
