Title :
High-gain GaInP/GaAs heterojunction phototransistor utilising guard-ring structure
Author :
Twynan, J.K. ; Claxton, P.A. ; Woods, R.C.
Author_Institution :
Sheffield Univ., UK
Abstract :
GaInP/GaAs heterojunction phototransistors with an emitter guard-ring contact are fabricated. The gain and speed of response of a device is significantly improved by the application of bias to the guard-ring, indicating that the recombination current is surface-dominated and that the quality of the GaInP/GaAs heterojunction interface is high.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; p-n heterojunctions; phototransistors; GaInP-GaAs; emitter guard-ring contact; gain; guard-ring structure; heterojunction phototransistor; recombination current; speed; surface-dominated;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890063
