DocumentCode
78207
Title
A Simple Method for Assessing Power Devices Sensitivity to SEEs in Atmospheric Environment
Author
Foro, L.L. ; Touboul, A.D. ; Wrobel, F. ; Saigne, F.
Author_Institution
IES, Univ. Montpellier 2, Montpellier, France
Volume
60
Issue
4
fYear
2013
fDate
Aug. 2013
Firstpage
2559
Lastpage
2566
Abstract
Sensitive volume and critical energy are important fitting parameters for predicting the triggering of destructive events in power components. Based on both nuclear cross section and experimental data, we propose a method for estimating the sensitivity to the whole atmospheric spectrum of different IGBT technologies thanks to critical parameters extraction.
Keywords
insulated gate bipolar transistors; power semiconductor devices; IGBT technologies; SEE; atmospheric environment; destructive events; parameters extraction; power components; power devices sensitivity; Alpha particles; Insulated gate bipolar transistors; Ions; Neutrons; Performance evaluation; Radiation effects; Sensitivity; Atmospheric neutrons; MC-ORACLE; critical energy; cross section; insulated gate bipolar transistor (IGBT); nuclear cross-section; sensitive volume;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2013.2259639
Filename
6520896
Link To Document