High-resolution imaging of defects in III-V compound wafers by near-infra-red phase contrast microscopy

The development of a high-resolution infra-red microscope operating in the phase contrast mode is reported for observing defects in III-V compound wafers. Strings of microprecipitates smaller than 1 mu m in diameter connected by arched dislocation paths have been observed in indium-doped GaAs. These results give similar patterns to those previously seen by other workers using A/B etching.