Title :
Mechanisms of Ionizing Radiation Surface Effects on Transistors
Author :
Nelson, David L. ; Sweet, Richard J.
Author_Institution :
The Bendix Corporation Research Laboratories Division Southfield, Michigan
Keywords :
Annealing; Bipolar transistors; Current measurement; Degradation; Extraterrestrial measurements; Ionizing radiation; MOSFETs; Silicon; Space charge; Testing;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1996.4324362
