Comparison of MOS and Metal-Nitride-Semiconductor Insulated Gate Field-Effect Transistors under Electron Irradiation

Insulated gate field-effect transistors with silicon dioxide and silicon nitride insulationwere irradiated with 1 MeV electrons over a wide range of biasing conditions. In nitride insulated devices the radiation induced shift in gate turn-onvoltage was greatly reduced and source-drain leakage currents eliminated. The dependence of the equilibrium shift in gate turn-on voltage on gate bias varied critically with the structure of the insulating layer, and an attempt has been made to correlate this with charge transfer mechanisms across the interfaces of the insulator.