• DocumentCode
    782384
  • Title

    Transient High Energy Radiation Response in the Thin-Film Transistor

  • Author

    Emmert, R.R. ; Berggren, C.C. ; Peffley, W.M. ; Honnold, V.R.

  • Author_Institution
    Hughes Aircraft Company Hughes-Fullerton Fullerton, California
  • Volume
    13
  • Issue
    6
  • fYear
    1966
  • Firstpage
    287
  • Lastpage
    294
  • Abstract
    The transient response of the polycrystalline CdSe thin-film transistor (TFT) to pulsed ionizing radiation has been experimentally observed. The incremental drain current is characterized by a prompt response followed by a much slower decay, which has a time constant of the order of 100 microseconds. This slow portion of the device response has been shown to be due to trapping processes in the bulk semiconductor film. A model has been developed to explain this response.
  • Keywords
    Circuit testing; Electrodes; Insulation; Ionizing radiation; Pulse circuits; Semiconductor films; Semiconductor thin films; Substrates; Thin film transistors; Transient response;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1996.4324373
  • Filename
    4324373
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=782384