Title :
CH4/H2/Ar ECR plasma etching for AlGaAs/InGaAs/GaAs pseudomorphic HFETs
Author :
van Hassel, J.G. ; van Es, C.M. ; Nouwens, P.A.M.
Author_Institution :
Interuniv. Res. Inst. on Commun. Technol., Eindhoven Univ. of Technol., Netherlands
fDate :
5/11/1995 12:00:00 AM
Abstract :
The effect of electron cyclotron resonance (ECR) plasma etching using CH4H/2/Ar on Si δ-doped pseudomorphic AlGaAs/InGaAs/GaAs heterostructures and field-effect transistors has been investigated. Hall measurements were performed as a function of temperature (5-300 K) and the Hall mobility and the sheet density compared to wet chemically etched reference samples. Direct current and high-frequency measurements were performed on dry gate-recessed PMHFETs
Keywords :
Hall mobility; III-V semiconductors; aluminium compounds; field effect transistors; gallium arsenide; indium compounds; sputter etching; δ-doped heterostructures; 5 to 300 K; AlGaAs; AlGaAs-InGaAs-GaAs; Ar; CH4/H2/Ar plasma; ECR plasma etching; GaAs; Hall measurements; Hall mobility; InGaAs; dry gate-recessed PMHFETs; electron cyclotron resonance; field-effect transistors; pseudomorphic HFETs; sheet density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950560
