• DocumentCode
    782430
  • Title

    CH4/H2/Ar ECR plasma etching for AlGaAs/InGaAs/GaAs pseudomorphic HFETs

  • Author

    van Hassel, J.G. ; van Es, C.M. ; Nouwens, P.A.M.

  • Author_Institution
    Interuniv. Res. Inst. on Commun. Technol., Eindhoven Univ. of Technol., Netherlands
  • Volume
    31
  • Issue
    10
  • fYear
    1995
  • fDate
    5/11/1995 12:00:00 AM
  • Firstpage
    834
  • Lastpage
    836
  • Abstract
    The effect of electron cyclotron resonance (ECR) plasma etching using CH4H/2/Ar on Si δ-doped pseudomorphic AlGaAs/InGaAs/GaAs heterostructures and field-effect transistors has been investigated. Hall measurements were performed as a function of temperature (5-300 K) and the Hall mobility and the sheet density compared to wet chemically etched reference samples. Direct current and high-frequency measurements were performed on dry gate-recessed PMHFETs
  • Keywords
    Hall mobility; III-V semiconductors; aluminium compounds; field effect transistors; gallium arsenide; indium compounds; sputter etching; δ-doped heterostructures; 5 to 300 K; AlGaAs; AlGaAs-InGaAs-GaAs; Ar; CH4/H2/Ar plasma; ECR plasma etching; GaAs; Hall measurements; Hall mobility; InGaAs; dry gate-recessed PMHFETs; electron cyclotron resonance; field-effect transistors; pseudomorphic HFETs; sheet density;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19950560
  • Filename
    386912
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=782430