• DocumentCode
    782459
  • Title

    GaInAsSb/GaSb infrared photodetectors prepared by MOCVD

  • Author

    Zhang, B. ; Zhou, T. ; Jiang, H. ; Ning, Y. ; Jin, Y.

  • Author_Institution
    Inst. of Phys., Acad. Sinica, Changchun, China
  • Volume
    31
  • Issue
    10
  • fYear
    1995
  • fDate
    5/11/1995 12:00:00 AM
  • Firstpage
    830
  • Lastpage
    832
  • Abstract
    GaInAsSb/GaSb heterojunction photodetectors have been grown by metalorganic chemical vapour deposition (MOCVD). The room temperature performances of the photodetectors are described. The responsivity spectrum is peaked at 2.25 μm and cut off at 1.7 μm in the short wavelength and at 2.4 μm in the long wavelength, respectively. The room temperature detectivity D* is 109 cm Hz W-1 at 2.25 μm
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; infrared detectors; photodetectors; semiconductor growth; vapour phase epitaxial growth; 1.7 to 2.4 micron; GaInAsSb-GaSb; IR detectors; MOCVD; chemical vapour deposition; heterojunction photodetectors; infrared photodetectors; metalorganic CVD; room temperature performance;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19950525
  • Filename
    386915
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=782459