Title :
GaInAsSb/GaSb infrared photodetectors prepared by MOCVD
Author :
Zhang, B. ; Zhou, T. ; Jiang, H. ; Ning, Y. ; Jin, Y.
Author_Institution :
Inst. of Phys., Acad. Sinica, Changchun, China
fDate :
5/11/1995 12:00:00 AM
Abstract :
GaInAsSb/GaSb heterojunction photodetectors have been grown by metalorganic chemical vapour deposition (MOCVD). The room temperature performances of the photodetectors are described. The responsivity spectrum is peaked at 2.25 μm and cut off at 1.7 μm in the short wavelength and at 2.4 μm in the long wavelength, respectively. The room temperature detectivity D* is 109 cm Hz W-1 at 2.25 μm
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; infrared detectors; photodetectors; semiconductor growth; vapour phase epitaxial growth; 1.7 to 2.4 micron; GaInAsSb-GaSb; IR detectors; MOCVD; chemical vapour deposition; heterojunction photodetectors; infrared photodetectors; metalorganic CVD; room temperature performance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950525
